The effect of substrate and processing conditions on the properties of sol-gel derived Pb(Zr,Ti)O-3 thin films
Lead zirconate titanate Pb(Zr0.45Ti0.55)O-3 PZT thin films were prepared by sol-gel method on Pt-(111)/Ti/SiO2/Si-(100) substrates from metal organic precursor solutions. Two different types of substrates were used in this study. It was concluded that the substrates were very effective on the structural and electrical properties of the films. The difference observed in the electrical properties of the films prepared on different substrates was explained by the difference in the crystallinity, (111) dominant orientation and grain size of the substrates. The films prepared at various temperatures from 650 degrees C down to 450 degrees C have all displayed full (111) orientation. The remnant polarisation of the PZT film fabricated at 650 degrees C was 42 mu C/cm(2) whereas remnant polarisation of the film annealed at 450 degrees C was > 15 mu C/cm(2) which was still high enough for practical applications.