ICP-RIE etching of self-aligned InP based HBTs with Cl-2/N-2 chemistry

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dc.authorid0000-0003-0249-5927en_US
dc.contributor.authorTopaloglu, S.
dc.contributor.authorProst, W.
dc.contributor.authorTegude, F. -J.
dc.date.accessioned2024-07-12T21:52:06Z
dc.date.available2024-07-12T21:52:06Z
dc.date.issued2011en_US
dc.departmentMaltepe Üniversitesien_US
dc.description17th International Conference on Insulating Films on Semiconductors -- JUN 21-24, 2011 -- Grenoble, FRANCEen_US
dc.description.abstractWe report on a simple Inductively Coupled Plasma-Reactive Ion Etching (ICP-RIE) process with Cl-2/N-2 chemistry to process InP based, self-aligned HBTs with sub-micron emitters. Since the layer to be etched is in the range of 150 nm (the thickness of emitter cap and emitter layers), a low etch rate is beneficial. On the other hand, it is also necessary to use chemistries without hydrogen to prevent any possible hydrogen passivation. Therefore, in this work, Cl-2/N-2 chemistry is selected and a plasma process providing an etch rate of 120 nm/min is optimized. Not only the etch rate but also the electrical and the surface quality of the wafers are examined. It has been illustrated that the etch rate of the optimized process is uniform over the wafer and it is reproducible. In addition to that, it has been shown with electrical measurements that there is no degradation in the material quality. To test the optimized process. sub-micron HBTs are fabricated and the RF measurements have shown an f(max) of 340 GHz which make them to be used in high speed communication systems. In addition to that, lower and controlled under etch gives better current gain distribution over the wafer leading better device models and resulting in better yield in MMICs. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.mee.2011.02.056
dc.identifier.endpage1605en_US
dc.identifier.issn0167-9317
dc.identifier.issue7en_US
dc.identifier.scopus2-s2.0-79958072361en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1601en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.mee.2011.02.056
dc.identifier.urihttps://hdl.handle.net/20.500.12415/8347
dc.identifier.volume88en_US
dc.identifier.wosWOS:000292572700136en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.ispartofMICROELECTRONIC ENGINEERINGen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmzKY02922
dc.subjectPlasma etchingen_US
dc.subjectDry etchingen_US
dc.subjectICP-RIEen_US
dc.subjectReactive ion etchingen_US
dc.subjectInductively coupled plasmaen_US
dc.subjectHeterojunction bipolar transistorsen_US
dc.subjectHBTsen_US
dc.subjectSub-micron HBTsen_US
dc.subjectHigh frequency transistorsen_US
dc.subjectHybrid etchingen_US
dc.subjectHBT processingen_US
dc.titleICP-RIE etching of self-aligned InP based HBTs with Cl-2/N-2 chemistryen_US
dc.typeArticle
dspace.entity.typePublication

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