Novel PANI:Borophene/Si Schottky device for the sensitive detection of illumination and NaCl salt solutions

Küçük Resim Yok

Tarih

2024

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Springer

Erişim Hakkı

info:eu-repo/semantics/openAccess

Araştırma projeleri

Organizasyon Birimleri

Dergi sayısı

Özet

Metal/semiconductor structures, particularly Schottky diodes, play a crucial role in semiconductor identification and the production of electronic devices, like solar cells, photodetectors, photodiodes, and field-effect transistors (FETs). These structures are of great interest due to their ability to modify electrical and optical properties, responding to external factors such as illumination and temperature. However, despite extensive research in this field, there has been limited exploration of silicon-based metal/semiconductor structures incorporating PANI:Borophene interfacial materials. In this study, we prepared PANI:Borophene/p-Si and PANI:Borophene/n-Si structures and examined their photodiode properties using various measurements. The unoccupied trap levels (m) obtained 0.44 and 0.33 for Al/PANI:Borophene/p-Si and Au/PANI:Borophene/n-Si device, respectively. Our investigation revealed that both structures exhibited rectification behavior, with linear characteristics in the forward bias region, and deviations attributed to series resistance effects at higher voltages. Moreover, the presence of borophene in the interfacial layer led to improvements in the devices’ electrical properties. Finally, the PANI:Borophene/Si Schottky diodes was tested for salt detection and the Al/PANI:Borophene/p-Si diode has the characteristics of salt (NaCl) concentration detection sensor and it successfully detected salt concentration changes with respect to current flow. © The Author(s) 2024.

Açıklama

Anahtar Kelimeler

Electric Resistance, Field Effect Transistors, Optical Properties, Photodiodes, Schottky Barrier Diodes, Silicon, Silicon Compounds, Structural Properties, Cell Effects, Electrical And Optical Properties, Electronics Devices, External Factors, Field-Effect Transistor, Metal-Semiconductor Structures, Salt Solution, Schottky Devices, Schottky Diodes, Sensitive Detection, Sodium Chloride

Kaynak

Journal of Materials Science: Materials in Electronics

WoS Q Değeri

Scopus Q Değeri

Q2

Cilt

35

Sayı

7

Künye