Novel PANI:Borophene/Si Schottky device for the sensitive detection of illumination and NaCl salt solutions

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dc.contributor.authorYıldız, D.E.
dc.contributor.authorKaradeniz, S.
dc.contributor.authorYıldırım, M.
dc.contributor.authorTasaltın, N.
dc.contributor.authorGulsaran, A.
dc.contributor.authorBastug, Azer, B.
dc.contributor.authorYavuz, M.
dc.date.accessioned2024-07-12T21:40:21Z
dc.date.available2024-07-12T21:40:21Z
dc.date.issued2024en_US
dc.department[Belirlenecek]en_US
dc.description.abstractMetal/semiconductor structures, particularly Schottky diodes, play a crucial role in semiconductor identification and the production of electronic devices, like solar cells, photodetectors, photodiodes, and field-effect transistors (FETs). These structures are of great interest due to their ability to modify electrical and optical properties, responding to external factors such as illumination and temperature. However, despite extensive research in this field, there has been limited exploration of silicon-based metal/semiconductor structures incorporating PANI:Borophene interfacial materials. In this study, we prepared PANI:Borophene/p-Si and PANI:Borophene/n-Si structures and examined their photodiode properties using various measurements. The unoccupied trap levels (m) obtained 0.44 and 0.33 for Al/PANI:Borophene/p-Si and Au/PANI:Borophene/n-Si device, respectively. Our investigation revealed that both structures exhibited rectification behavior, with linear characteristics in the forward bias region, and deviations attributed to series resistance effects at higher voltages. Moreover, the presence of borophene in the interfacial layer led to improvements in the devices’ electrical properties. Finally, the PANI:Borophene/Si Schottky diodes was tested for salt detection and the Al/PANI:Borophene/p-Si diode has the characteristics of salt (NaCl) concentration detection sensor and it successfully detected salt concentration changes with respect to current flow. © The Author(s) 2024.en_US
dc.description.sponsorshipFEF01.13.003, FEF19002.15.001, FEF19004.15.010; Türkiye Bilimsel ve Teknolojik Araştırma Kurumu, TÜBİTAK: 122N962en_US
dc.description.sponsorshipThe authors gratefully acknowledge the Scientific and Technological Research Council of Turkey (TUBITAK) due to the financial support for the Project 122N962, and Hitit University of BAP due to the financial support for the Project FEF19004.15.010, FEF19002.15.001, FEF01.13.003.en_US
dc.identifier.doi10.1007/s10854-024-12243-x
dc.identifier.issn0957-4522
dc.identifier.issue7en_US
dc.identifier.scopus2-s2.0-85186622185en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-024-12243-x
dc.identifier.urihttps://hdl.handle.net/20.500.12415/7255
dc.identifier.volume35en_US
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science: Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.snmzKY05211
dc.subjectElectric Resistanceen_US
dc.subjectField Effect Transistorsen_US
dc.subjectOptical Propertiesen_US
dc.subjectPhotodiodesen_US
dc.subjectSchottky Barrier Diodesen_US
dc.subjectSiliconen_US
dc.subjectSilicon Compoundsen_US
dc.subjectStructural Propertiesen_US
dc.subjectCell Effectsen_US
dc.subjectElectrical And Optical Propertiesen_US
dc.subjectElectronics Devicesen_US
dc.subjectExternal Factorsen_US
dc.subjectField-Effect Transistoren_US
dc.subjectMetal-Semiconductor Structuresen_US
dc.subjectSalt Solutionen_US
dc.subjectSchottky Devicesen_US
dc.subjectSchottky Diodesen_US
dc.subjectSensitive Detectionen_US
dc.subjectSodium Chlorideen_US
dc.titleNovel PANI:Borophene/Si Schottky device for the sensitive detection of illumination and NaCl salt solutionsen_US
dc.typeArticle
dspace.entity.typePublication

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