Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures

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dc.authorid0000-0003-0249-5927en_US
dc.contributor.authorLysov, A.
dc.contributor.authorOffer, M.
dc.contributor.authorGutsche, C.
dc.contributor.authorRegolin, I.
dc.contributor.authorTopaloglu, S.
dc.contributor.authorGeller, M.
dc.contributor.authorProst, W.
dc.contributor.authorTegude, F-J
dc.date.accessioned2024-07-12T21:52:21Z
dc.date.available2024-07-12T21:52:21Z
dc.date.issued2011en_US
dc.departmentMaltepe Üniversitesien_US
dc.description.abstractWe present GaAs electroluminescent nanowire structures fabricated by metal organic vapor phase epitaxy. Electroluminescent structures were realized in both axial pn-junctions in single GaAs nanowires and free-standing nanowire arrays with a pn-junction formed between nanowires and substrate, respectively. The electroluminescence emission peak from single nanowire pn-junctions at 10 K was registered at an energy of around 1.32 eV and shifted to 1.4 eV with an increasing current. The line is attributed to the recombination in the compensated region present in the nanowire due to the memory effect of the vapor-liquid-solid growth mechanism. Arrayed nanowire electroluminescent structures with a pn-junction formed between nanowires and substrate demonstrated at 5 K a strong electroluminescence peak at 1.488 eV and two shoulder peaks at 1.455 and 1.519 eV. The main emission line was attributed to the recombination in the p-doped GaAs. The other two lines correspond to the tunneling-assisted photon emission and band-edge recombination in the abrupt junction, respectively. Electroluminescence spectra are compared with the micro-photoluminescence spectra taken along the single p-, n- and single nanowire pn-junctions to find the origin of the electroluminescence peaks, the distribution of doping species and the sharpness of the junctions.en_US
dc.description.sponsorshipEuropean project NaSol; [Sonderforschungsbereich SFB 445]en_US
dc.description.sponsorshipWe gratefully acknowledge partial financial support by the Sonderforschungsbereich SFB 445 and European project NaSol within the Ziel2.NRW program.en_US
dc.identifier.doi10.1088/0957-4484/22/8/085702
dc.identifier.issn0957-4484
dc.identifier.issue8en_US
dc.identifier.pmid21242617en_US
dc.identifier.scopus2-s2.0-79251567369en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://dx.doi.org/10.1088/0957-4484/22/8/085702
dc.identifier.urihttps://hdl.handle.net/20.500.12415/8365
dc.identifier.volume22en_US
dc.identifier.wosWOS:000286317500014en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.indekslendigikaynakPubMed
dc.language.isoenen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.relation.ispartofNANOTECHNOLOGYen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.snmzKY03084
dc.titleOptical properties of heavily doped GaAs nanowires and electroluminescent nanowire structuresen_US
dc.typeArticle
dspace.entity.typePublication

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